The Impact of Hysteresis Effect on Device Characteristic and Reliability for Various Fin-Widths Tri-Gate Hf0.5Zr0.5O2 Ferroelectric FinFET

In this study, we developed a facilitated ferroelectric high-k/metal-gate n-type FinFET based on Hf0.5Zr0.5O2. We investigated the impact of hysteresis effect device characteristics various fin-widths and degradation induced by stress (Fe-FinFET). clarified electrical conducted related reliability inspections. For Fe-FinFET, behavior Hf0.5Zr0.5O2-based gate stack in Si-fin body is apparent, especially at narrower fin-widths, which affects performance under voltage stress. The film worsened after with higher ionization, resulting serious degradation. It suggested that caused both shift polarization generation interface traps high-energy carrier stress, was confirmed crystal structure inspection.